Cavity-solitons switching in semiconductor microcavities

被引:58
作者
Hachair, X [1 ]
Furfaro, L
Javaloyes, J
Giudici, M
Balle, S
Tredicce, J
Tissoni, G
Lugiato, LA
Brambilla, M
Maggipinto, T
机构
[1] Univ Nice, CNRS, UMR 6618, Inst Nonlineaire Nice, F-06560 Valbonne, France
[2] Univ Insubria, Dipartimento Matemat & Fis, INFM, I-22100 Como, Italy
[3] Univ Bari, Dipartimento Fis Interateneo, INFM, I-70126 Bari, Italy
[4] Politecn Bari, Dipartimento Fis Interateneo, INFM, I-70126 Bari, Italy
关键词
D O I
10.1103/PhysRevA.72.013815
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Cavity solitons (CSs) are localized structures appearing as intensity peaks in the homogeneous background of the field emitted by a nonlinear microresonator. We experimentally and theoretically study the switch-on process of cavity solitons in semiconductor amplifiers. The switching time has two contributions: a lethargic lapse following the application of the switching pulse and a characteristic buildup time. While the latter is not significantly affected by the control parameters, the former crucially depends on them. Optimization of the parameters leads to a switch-on time of less than one nanosecond, assessing the CS competitiveness for all-optical applications.
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页数:4
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