A novel technology to form air gap for ULSI application

被引：6

作者：

Chang, KM ^{[1
]}

Yang, JY

Chen, LW

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 04期

关键词：

air gap; HSQ; low dielectric constant material; RC time constant;

D O I：

10.1109/55.753761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we develop a novel process to fill the interline space with air (dielectric constant = 1). A silicon wafer, whose face is downward, patterned with metal lines, is placed on the top of another silicon wafer coated with dry polyimide. Hydrogen silsesquioxanes (HSQ), FOx-16, is diluted and trickled through the slit between the metal lines and the polyimide. Then the HSQ forms an ultrathin liquid layer on the dry polyimide and contacts with the top of the metal lines. After the liquid HSQ becomes dry, the air gap is formed, The dry polyimide has good adhesion to silicon substrate but not to the dry FOx-16, so we can separate the polyimide from the dry FOx-16 and get the air gap. The liquid property of HSQ and its high selective adsorption between the metal lines and the polyimide are utilized to form the air gap.

引用

页码：185 / 187

页数：3