Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications

被引：9

作者：

Allen, RA ^{[1
]}

Ghoshtagore, RN ^{[1
]}

Cresswell, MW ^{[1
]}

Linholm, LW ^{[1
]}

Sniegowski, JJ ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XII | 1998年 / 3332卷

关键词：

D O I：

10.1117/12.308722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The National Institute of Standards and Technology (NIST) is exploring the feasibility of using artifacts fabricated on silicon-on-insulator (SOI) materials to quantify methods divergence, for critical dimension (CD) metrology applications. Test structures, patterned on two types of (110) SOI materials, SIMOX (Separation by IMplantation of OXygen) and BESOI (Bonded-and-Etched-back Silicon-on-Insulator), have been compared. In this paper, we describe results of electrical critical dimension (ECD) measurements and the relative performance of the test structures fabricated on the two SOI materials.

引用

页码：124 / 131

页数：8