A recombination model for a-Si:H/c-Si heterostructures

被引：30

作者：

Leendertz, C. ^{[1
]}

Stangl, R. ^{[1
]}

Schulze, T. F. ^{[1
]}

Schmidt, M. ^{[1
]}

Korte, L. ^{[1
]}

机构：

[1] Helmholtz Zentrum Mat & Energie, Inst Silizium Photovolta, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 | 2010年 / 7卷 / 3-4期

关键词：

SI-SIO2; INTERFACE; SEMICONDUCTORS; ILLUMINATION; PARAMETERS;

D O I：

10.1002/pssc.200982698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semi-analytical model to describe the excess carrier concentration-dependent recombination processes and the charge carrier lifetime in a-Si:H/c-Si heterostructures has been developed. In contrast to previously proposed models it accounts for most relevant physical processes: In addition to bulk recombination processes the recombination via distributed dangling bond defects at the interface is integrated. Furthermore interface band bending depending on the a-Si: H doping and the Fermi-level dependent defect charge is taken into consideration as well as charge carrier diffusion to the interface. Despite its complexity the model allows for rapid computation and is thus well suited for fitting lifetime measurements in order to extract interface parameters. The model is crosschecked for various experimentally relevant situations against the numerical simulation tool AFORS-HET. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1005 / 1010

页数：6

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