Electronic distributions in quasicrystalline Al65Cu20Ru15 alloy

被引:10
作者
BelinFerre, E
Dankhazi, Z
Sadoc, A
Berger, C
Muller, H
Kirchmayr, H
机构
[1] GDR, CINQ, F-75231 PARIS 05, FRANCE
[2] EOTVOS LORAND UNIV, INST SOLID STATE PHYS, H-1088 BUDAPEST, HUNGARY
[3] UNIV PARIS 11, IP CEA, MENESR, CNRS, LURE, F-91405 ORSAY, FRANCE
[4] UNIV PARIS 11, GDR, CINQ, F-91405 ORSAY, FRANCE
[5] LPMS, F-95806 CERGY, FRANCE
[6] CNRS, LEPES, F-38042 GRENOBLE, FRANCE
[7] GDR, CINQ, F-38042 GRENOBLE, FRANCE
[8] VIENNA TECH UNIV, INST EXPTL PHYS, A-1040 VIENNA, AUSTRIA
关键词
D O I
10.1088/0953-8984/8/19/025
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Occupied and unoccupied electronic distributions of quasicrystalline Al65Cu20Ru15 have been studied mainly using soft-x-ray emission and absorption spectroscopy measurements. The partial distributions are adjusted in the binding energy scale in order to gain insight into the electronic interactions in this material. Interaction between Al states and Ru 4d states near the Fermi level and between Al and Cu 3d states in the middle of the occupied band is shown. At the Fermi level a significant pseudo-gap is observed in the Al 3p and 3s-d distributions. In the unoccupied band, the Ru and Cu d-s-like states are in interaction with the Al p states. The Ru and Cu states retain a slight d-like character at the energies of the conduction edges that suggests faint charge transfer to Ru atoms. Far from the Fermi level, the Ru and Cu states are strongly hybridized to s states. Adjustment of Al 3p and Al p distributions at the same intensity at the Fermi level points to a significant low intensity of the density of Al p conduction states over a few electronvolts from the Fermi level.
引用
收藏
页码:3513 / 3523
页数:11
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