Silicon distribution in SAPO materials:: A computational study of STA-7 combined to 29Si MAS NMR spectroscopy

被引:9
作者
Deroche, I. [1 ]
Maurin, G. [1 ]
Llewellyn, P. L. [2 ]
Castro, M. [3 ]
Wright, P. A. [3 ]
机构
[1] Univ Montpellier 2, CNRS UM2 ENSCM UM1, UMR 5253, Inst Charles Gerhardt Montpellier, F-34095 Montpellier 05, France
[2] Univ Aix Marseille 1, Ctr St Jerome, CNRS UMR 6121, Lab MADIRAL, F-13397 Marseille, France
[3] Univ St Andrews, Sch Chem, St Andrews KY16 9ST, Fife, Scotland
关键词
SAPO materials; chemical disorder; silicon distribution; Si-29; NMR; computational chemistry;
D O I
10.1016/j.micromeso.2007.03.021
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The distribution of silicon atoms in the STA-7 framework has been investigated by combining Si-29 MAS NMR spectroscopy and computational tools based on energy minimization techniques. It was clearly established that only a SM2 silicon substitution mechanism occurs for an atomic silicon content of 0.05 and 0.10, generating preferential sites for silicon atoms in the large channels associated with protons pointing systematically towards the centre of the cavities interacting with a 6-membered ring. The modelling techniques are used to propose the most stable configurations for the STA-7 frameworks of varying silicon content. This procedure allows us to provide a realistic microscopic description of the STA-7 material, a key step before further investigation of the properties of this system. (C) 2007 Elsevier Inc. All rights reserved.
引用
收藏
页码:268 / 275
页数:8
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