Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method

被引：44

作者：

Kundakci, M. ^{[1
]}

Ates, A. ^{[1
]}

Astam, A. ^{[1
]}

Yidirim, M. ^{[1
]}

机构：

[1] Ataturk Univ, Fac Art & Sci, Dept Phys, TR-25240 Erzurum, Turkey

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 03期

关键词：

SILAR; CdS; In2S3; Cd0.5In0.5S; thin films;

D O I：

10.1016/j.physe.2007.08.145

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CdS, Cd0.5In0.5S and In2S3 thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on a glass substrate at room temperature. These films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical and electrical properties of these films have been investigated as a function of temperature. The absorption measurements were carried out in the temperature range 10-320 K with a step of 10 K. The band gap energies 'E-g' for CdS, Cd0.5In0.5S and In2S3 thin films have been found as 2.38, 2.52 and 2.63 eV at 10 K, respectively. The electrical resistivity of CdS, Cd0.5In0.5S and In2S3 thin films have been determined using a 'dc' two-probe method, in the temperature range of 300-450 K. The electrical resistivity values have been calculated at 300 K, as 2 x 10(6) Omega cm, 3.5 x 10(7) Omega cm and 1.5 x 10(7) Omega cm for CdS, Cd0.5In0.5S and In2S3, respectively. This is one of the first studies which led to deposition of the CdInS thin films by using the SILAR method. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：600 / 605

页数：6

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