Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elements

被引：5

作者：

Pohm, AV ^{[1
]}

Beech, RS ^{[1
]}

Daughton, JM ^{[1
]}

Everitt, BA ^{[1
]}

Chen, EY ^{[1
]}

Durlam, M ^{[1
]}

Nordquist, K ^{[1
]}

Zhu, T ^{[1
]}

Tehrani, S ^{[1
]}

机构：

[1] MOTOROLA INC,RES LAB,TEMPE,AZ 85284

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Money elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15 % material exhibits a memory mode with large outputs of +/- 8%. Analysis shows that the mode is suitable for multi-megabit die with high performance if yield can be achieved.

引用

页码：4645 / 4647

页数：3