Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy

被引：5

作者：

Hickman, R ^{[1
]}

Van Hove, JM ^{[1
]}

Chow, PP ^{[1
]}

Klaassen, JJ ^{[1
]}

Wowchack, AM ^{[1
]}

Polley, CJ ^{[1
]}

机构：

[1] SVT Associates, Eden Prairie, MN 55344 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 12期

关键词：

D O I：

10.1016/S0038-1101(98)00214-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-band performance;high temperature D.C. operation and uniformity have been evaluated for 1 mu m gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) sapphire substrates to determine process uniformity. HEMTs with 300 mu m total gate width and dual gate finger geometry have been fabricated with 650-700 cm(2) V-1 xs mobility. Maximum frequency cut-offs on the order of 8-10 GHz were achieved. D.C. performance at room temperature was >500 mA mm(-1), and external transconductance was > 70 mS mm(-1). The transistors operated at test temperatures of 425 degrees C in air. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：2183 / 2185

页数：3

共 4 条

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