Electrically pumped lasing from CdSe quantum dots

被引：42

作者：

Klude, M ^{[1
]}

Passow, T ^{[1
]}

Kröger, R ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28359 Bremen, Germany

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 18期

关键词：

D O I：

10.1049/el:20010764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication of a ZnSe-based laser diode Which employs a fivefold CdSe quantum dot stack separated by ZnSSe spacer layers of high S content is reported. For the first time, electrically pumped room-temperature lasing from such quantum dots was obtained at a wavelength around 560.5nm. The threshold Current density is 7.5 kA/cm(2).

引用

页码：1119 / 1120

页数：2

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