Local atomic structure of semiconductor alloys using pair distribution functions. II.

被引：14

作者：

Chung, JS ^{[1
]}

Thorpe, MF

机构：

[1] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, Chungbuk, South Korea

[2] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[3] Michigan State Univ, Ctr Fundamental Mat Res, E Lansing, MI 48824 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.4807

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method of calculating the pair distribution function in semiconductor alloys has been extended to the differential and the partial pair distribution functions, and applied to pseudobinaries of the form A(1-x)B(x)C with the zinc-blends structure. We have used a simple valence force model with bond-stretching and bond-bending forces. Results of calculations are presented for Ga0.5In0.5As. The differential pair distribution function provides a useful experimental way of determining the structural distortions in semiconductor alloys-specifically the mean nearest-neighbor and second-neighbor distances and widths can be obtained for chemically specific pairs of atoms. [S0163-1829(99)00407-5].

引用

页码：4807 / 4812

页数：6

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