Synthesis of single-crystalline α-Si3N4 nanobelts by extended vapour-liquid-solid growth

被引:62
作者
Huo, KF
Ma, YW
Hu, YM
Fu, JJ
Lu, B
Lu, YN
Hu, Z [1 ]
Chen, Y
机构
[1] Nanjing Univ, Key Lab Mesoscop Chem MOW, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Chem, Jiangsu Provincial Lab Nanotechnol, Nanjing 210093, Peoples R China
[3] Nanjing Inst Chem Technol, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China
关键词
D O I
10.1088/0957-4484/16/10/050
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A simple chemical method for the production of single-crystalline alpha-Si3N4 nanobelts has been developed, consisting of nitridation of a high-Si-content Fe-Si 'catalyst' by ammonia at 1300 degrees C. The as-synthesized product was characterized by means of x-ray diffraction, electron microscopy and energy-dispersive x-ray spectroscopy. The alpha-Si3N4 nanobelts have widths of 60-120 nm, thicknesses of 10-30 nm and lengths up to microns. Four intense green-blue luminescence bands at 398 nm (3.12 eV), 434 nm (2.86 eV), 492 nm (2.52 eV) and 540 nm (2.30 eV) were observed and analysed for the product, which indicates the potential applications in optoelectronics. The growth mechanism has also been speculated upon. The potential technological importance of the product, the simplicity of the preparation procedure, as well as the cheap commercial precursor of Fe-Si alloy particles makes this study both scientifically and technologically interesting.
引用
收藏
页码:2282 / 2287
页数:6
相关论文
共 45 条
[1]   Single-crystalline gallium nitride nanobelts [J].
Bae, SY ;
Seo, HW ;
Park, J ;
Yang, H ;
Park, JC ;
Lee, SY .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :126-128
[2]   Carbon nanotubes - the route toward applications [J].
Baughman, RH ;
Zakhidov, AA ;
de Heer, WA .
SCIENCE, 2002, 297 (5582) :787-792
[3]  
Claussen N, 2002, ADV ENG MATER, V4, P117, DOI 10.1002/1527-2648(200203)4:3<117::AID-ADEM117>3.0.CO
[4]  
2-9
[5]   Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts [J].
Comini, E ;
Faglia, G ;
Sberveglieri, G ;
Pan, ZW ;
Wang, ZL .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1869-1871
[6]   Nucleation and growth of silicon nitride nanoneedles using microwave plasma heating [J].
Cui, H ;
Stoner, BR .
JOURNAL OF MATERIALS RESEARCH, 2001, 16 (11) :3111-3115
[7]   Novel nanostructures of functional oxides synthesized by thermal evaporation [J].
Dai, ZR ;
Pan, ZW ;
Wang, ZL .
ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (01) :9-24
[8]   OPTICAL-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION [J].
DESHPANDE, SV ;
GULARI, E ;
BROWN, SW ;
RAND, SC .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) :6534-6541
[9]   Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods [J].
Gao, YH ;
Bando, Y ;
Kurashima, K ;
Sato, T .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1515-1519
[10]   Nanobelts of the dielectric material Ge3N4 [J].
Gao, YH ;
Bando, Y ;
Sato, T .
APPLIED PHYSICS LETTERS, 2001, 79 (27) :4565-4567