PolySilicon thin film transistors fabricated at 100°C on a flexible plastic substrate

被引：39

作者：

Theiss, SD ^{[1
]}

Carey, PG ^{[1
]}

Smith, PM ^{[1
]}

Wickboldt, P ^{[1
]}

Sigmon, TW ^{[1
]}

Tung, YJ ^{[1
]}

King, TJ ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100 degrees C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO2 layer for the gate dielectric, and a post-fabrication anneal at 150 degrees C, we have succeeded in fabricating TFTs with I-ON/I-OFF ratios >5x10(5) and electron mobilities >60 cm(2)/V-s on polyester substrates.

引用

页码：257 / 260

页数：4

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