Spin-valve heads with synthetic antiferromagnet CoFe/Ru/CoFe/IrMn

被引：65

作者：

Huai, Y ^{[1
]}

Zhang, J ^{[1
]}

Anderson, GW ^{[1
]}

Rana, P ^{[1
]}

Funada, S ^{[1
]}

Hung, CY ^{[1
]}

Zhao, M ^{[1
]}

Tran, S ^{[1
]}

机构：

[1] Read Rite Corp, Spin Valve Mat Proc Testing, Fremont, CA 94539 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.369883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-valve (SV) films Si(100)/Ta30/NiFe50/CoFe20/Cu26/ CoFe23/Ru7/CoFe20/IrMn50/Ta30 (in Angstrom) exhibit a room temperature (RT) giant magnetoresitance (GMR) ratio of 8.5% with an effective exchange pinning field (H-eex) of similar to 1.3 kOe and an antiferromagnetic (AF) saturation field (Hs) of; similar to 6.0 kOe. The synthetic spin valve shows a GMR ratio of 5.0% at 150 degrees C with H-eex >500 Oe, while a conventional spin valve [Si(100)/Ta50/NiFe50/CoFe20/Cu28/CoFe22/IrMn50/Ta50 in Angstrom] has a GMR ratio of 5.0% with H-ex,200 Oe. The synthetic sample also showed a superior thermal stability with a RT GMR value of 6.9% (compared to 6.1% for conventional sample) after an anneal at 250 degrees C for 10 h. Shielded narrow track synthetic SV readers demonstrated high amplitude, large dynamic range, and excellent magnetic stability, indicating extendibility for ultrahigh density read head applications. (C) 1999 American Institute of Physics. [S0021-8979(99)71308-3].

引用

页码：5528 / 5530

页数：3

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