Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

被引：86

作者：

Lee, JL ^{[1
]}

Kim, JK

Lee, JW

Park, YJ

Kim, T

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(98)00265-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lowest contact resistivity was achieved by the surface treatment of p-type GaN using KOH solution prior to Pd/Au metal deposition. For the p-type GaN with a hole concentration of 2.9 x 10(16)/cm(3), the contact resistivity decreased from 2.9 x 10(-1) to 7.1 x 10(-3) Ohm cm(2) by the surface treatment. This is the lowest value among the previous results ever reported on the formation of ohmic contacts to p-type GaN. The surface treatment is effective in removing the surface oxides formed on p-type GaN during the epitaxial growth which play a role to inhibit the hole transport from metal to p-type GaN. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：435 / 438

页数：4

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