A modified transparent conducting oxide for flat panel displays only

被引:98
作者
Chae, GS [1 ]
机构
[1] LG Philips LCD, Anyang Lab, Dongan Gu, Anyang 431080, Kyongki Do, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3A期
关键词
TFT-LCD; indium tin oxide (ITO); transparent conducting oxide (TCO); indium tin zinc oxide (ITZO); zinc oxide (ZnO);
D O I
10.1143/JJAP.40.1282
中图分类号
O59 [应用物理学];
学科分类号
摘要
To keep up with the current development trends of thin film transistor liquid-crystal display (TFF-LCD), two major requirements must be satisfied in the transparent conducting oxide (TCO)-meterial itself. First, there must be no etch residue after TCO patterning and good etch selectivity against low electrical resistivity metals. Second, there must be good chemical endurance of the TCO material to secure a good electrical signal that is transported from the controller to the TFT-LCD by way of contact between the TCO and the tape carrier package (TCP). To obtain a new TCO material to achieve the kind of trade-off behavior that a TCO film has, the method in which ZnO is alloyed into indium tin oxide (ITO) was studied. It was determined that the 2.0-4.0 wt% ZnO-alloyed ITO film (named ITZO) is desirable in order to obtain a well-defined patterning ability and the stable TCP-contact property simultaneously. It is concluded that ITZO film can replace ITO and IZO for the pixel electrodes of a TFT-LCD designed with specifications for high resolution and large display size.
引用
收藏
页码:1282 / 1286
页数:5
相关论文
共 14 条
[1]  
[Anonymous], UNPUB
[2]   INFLUENCE OF DISCHARGE PARAMETERS ON THE LAYER PROPERTIES OF REACTIVE MAGNETRON-SPUTTERED ZNO-AL FILMS [J].
ELLMER, K ;
KUDELLA, F ;
MIENTUS, R ;
SCHIECK, R ;
FIECHTER, S .
THIN SOLID FILMS, 1994, 247 (01) :15-23
[3]  
HAMBERG I, 1986, J APPL PHYS, V60, P123
[4]  
LAN JEH, 1990, J ELECT MAT, V25, P1806
[5]  
MIZUHASI A, 1996, MONTHLY DISPLAY, P40
[6]   ELECTRON DENSITY DISTRIBUTIONS IN ZNO CRYSTALS [J].
MOHANTY, GP ;
AZAROFF, LV .
JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (04) :1268-&
[7]  
NAGATOMO R, 1996, MONTHLY DISPLAY, P22
[8]   ELECTRICAL AND OPTICAL-PROPERTIES OF IN2O3-SN FILMS PREPARED BY ACTIVATED REACTIVE EVAPORATION [J].
NATH, P ;
BUNSHAH, RF ;
BASOL, BM ;
STAFFSUD, OM .
THIN SOLID FILMS, 1980, 72 (03) :463-468
[9]   ZINC-INDIUM-OXIDE - A HIGH-CONDUCTIVITY TRANSPARENT CONDUCTING OXIDE [J].
PHILLIPS, JM ;
CAVA, RJ ;
THOMAS, GA ;
CARTER, SA ;
KWO, J ;
SIEGRIST, T ;
KRAJEWSKI, JJ ;
MARSHALL, JH ;
PECK, WF ;
RAPKINE, DH .
APPLIED PHYSICS LETTERS, 1995, 67 (15) :2246-2248
[10]  
SHIGESATO Y, 1980, J APPL PHYS, V71, P7