Effect of oxalic acid concentration on the formation of anodic aluminum oxide using pulse anodization at room temperature

被引:30
作者
Chung, Chen-Kuei [1 ,2 ]
Liu, T. Y. [2 ]
Chang, W. T. [1 ]
机构
[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Dept Mech Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2010年 / 16卷 / 8-9期
关键词
NANOWIRE ARRAYS; POROUS ALUMINA; FABRICATION;
D O I
10.1007/s00542-009-0944-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Most anodic aluminum oxide (AAO) or porous anodic aluminum (PAA) films were fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at low temperatures of 0-10A degrees C to avoid dissolution effects at room temperature (RT). In this article, the fabrication of AAO or PAA film from commercial purity (99%) aluminum at RT has been investigated using hybrid pulse anodization under different oxalic acid concentration and process duration. The effect of acid concentration and anodization duration on the formation of AAO size and morphology has been studied. Both pore diameter and oxide layer thickness of AAO films were examined via SEM images and found that both increased with increasing oxalic concentration and anodization duration. In addition, the pore distribution was more concentrated at high electrolytic concentration and anodization duration.
引用
收藏
页码:1451 / 1456
页数:6
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