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Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist

被引：26
作者：
Yasin, S
Hasko, DG
Carecenac, F
机构：
[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
[2] CNRS, LAAS, F-31077 Toulouse, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 01期
关键词：
D O I：
10.1116/1.1342011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Negative resist image distortion is caused by resist swelling during development and is a major problem in ultrahigh resolution electron beam lithography. This problem has been overcome through the use of ultrasonically assisted development. In addition, exposure dose latitude is increased by 50% compared to conventional dip development, due to the improvement in contrast. These advantages have been exploited in order to realize similar to6 nm wide lines in calixarene resist. (C) 2001 American Vacuum Society.
引用
收藏
页码：311 / 313
页数：3
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