Modeling of epitaxial graphene functionalization

被引:23
作者
Boukhvalov, D. W. [1 ]
机构
[1] Natl Inst Mat Sci, Computat Mat Sci Ctr, Tsukuba, Ibaraki 3050047, Japan
关键词
SPECTROSCOPY; DYNAMICS;
D O I
10.1088/0957-4484/22/5/055708
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A new model for graphene epitaxially grown on silicon carbide is proposed. Density functional theory modeling of epitaxial graphene functionalization by hydrogen, fluorine, methyl and phenyl groups has been performed, with hydrogen and fluorine showing a high probability of cluster formation in high adatom concentration. It has also been shown that the clusterization of fluorine adatoms provides midgap states in formation, due to significant flat distortion of graphene. The functionalization of epitaxial graphene using larger species (methyl and phenyl groups) renders cluster formation impossible, due to the steric effect, and results in uniform coverage with the energy gap opening.
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页数:5
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