Fabrication and Evaluation of Solution-Processed Reduced Graphene Oxide Electrodes for p- and n-Channel Bottom-Contact Organic Thin-Film Transistors

被引:65
作者
Becerril, Hector A. [1 ,2 ]
Stoltenberg, Randall M. [1 ]
Tang, Ming Lee [1 ]
Roberts, Mark E. [1 ]
Liu, Zunfeng [3 ,4 ]
Chen, Yongsheng [3 ,4 ]
Kim, Do Hwan [5 ]
Lee, Bang-Lin [5 ]
Lee, Sangyoon [5 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Brigham Young Univ Idaho, Dept Chem, Rexburg, ID 83440 USA
[3] Nankai Univ, Inst Polymer Chem, Coll Chem, Key Lab Funct Polymer Mat, Tianjin 300071, Peoples R China
[4] Nankai Univ, Inst Polymer Chem, Coll Chem, Ctr Nanoscale Sci & Technol, Tianjin 300071, Peoples R China
[5] Samsung Elect CO LTD, Samsung Adv Inst Technol, Mat & Device Inst, Display Lab, Yongin 446712, South Korea
关键词
reduced graphene oxide; organic semiconductors; OTFT; compatible interfaces; thin film morphology; contact resistance; LARGE-AREA; MOLECULAR-ORIENTATION; FIELD; TRANSPARENT; DEPOSITION; RESISTANCE;
D O I
10.1021/nn101369j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Reduced graphene oxide (RGO) is an electrically conductive carbon based nanomaterial that has recently attracted attention as a potential electrode for organic electronics Here we evaluate several solution based methods for fabricating RGO bottom contact (BC) electrodes for organic film transistors (OTFTs), demonstrate functional p and n-channel devices with such electrodes and compare their electrical performance with analogous devices containing gold electrodes We show that the morphology of organic semiconductor films deposited on RGO electrodes is similar to that observed in the channel region of the devices and that devices fabricated with RGO electrodes have lower contact resistances compared, to those fabricated with gold contacts Although the conductivity of RGO is poor compared to that of gold, RGO is still an enticing electrode material for organic electronic devices possibly owing to the retention of desirable morphological features, lower contact resistance, lower cost, and solution processability
引用
收藏
页码:6343 / 6352
页数:10
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