Polymer electrolyte gating of carbon nanotube network transistors

被引:146
作者
Ozel, T
Gaur, A
Rogers, JA
Shim, M
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
关键词
D O I
10.1021/nl0503781
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Network behavior in single-walled carbon nanotubes (SWNTs) is examined by polymer electrolyte gating. High gate efficiencies, low voltage operation, and the absence of hysteresis in polymer electrolyte gating lead to a convenient and effective method of analyzing transport in SWNT networks. Furthermore, the ability to control carrier type with chemical groups of the host polymer allows us to examine both electron and hole conduction. Comparison to back gate measurements is made on channel length scaling. Frequency measurements are also made giving an upper limit of similar to 300 Hz switching speed for poly(ethylene oxide)/LiCIO4 gated SWNT thin film transistors.
引用
收藏
页码:905 / 911
页数:7
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