Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon

被引：42

作者：

Asaumi, K

Iriye, Y

Sato, K

机构：

来源：

MEMS 97, PROCEEDINGS - IEEE THE TENTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS: AN INVESTIGATION OF MICRO STRUCTURES, SENSORS, ACTUATORS, MACHINES AND ROBOTS | 1997年

关键词：

D O I：

10.1109/MEMSYS.1997.581877

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have developed an anisotropic-chemical-etching process simulation system, MICROCAD, which is equipped with a database of orientation dependent etching rates of single crystal silicon. When crystallographic orientation of the wafer, mask pattern, etching media and etching conditions such as its concentration and temperature are given, it calculates 3D etching profiles according to the etching time increments.

引用

页码：412 / 417

页数：6