Coupled InP quantum-dot InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure diode laser operation

被引：41

作者：

Walter, G ^{[1
]}

Holonyak, N

Ryou, JH

Dupuis, RD

机构：

[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Ctr Compound Semicond Microelect, Urbana, IL 61801 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期

关键词：

D O I：

10.1063/1.1416158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented showing that a p-n InP-In0.5Ga0.5P-In-0.5(Al0.3Ga0.2)P-In0.5Al0.5P quantum-dot (QD) heterostructure diode, with an auxiliary similar to 20 Angstrom InGaP quantum well (QW) coupled via an In(AlGa)P barrier (similar to 20 Angstrom) to the single layer of QDs to aid carrier collection, has a steeper current-voltage characteristic than the case of a similar diode with no auxiliary QW. The p-n InP+InGaP QD+QW diode is capable of 300 K visible-spectrum QD laser operation, while the single-layer InP QD diode (single QD layer) saturates at low current (less than or similar to1 mA) and does not exhibit stimulated emission. (C) 2001 American Institute of Physics.

引用

页码：3215 / 3217

页数：3

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