In situ characterisation of MOVPE by surface photoabsorption I. Substrate oxide desorption

被引：18

作者：

Allwood, DA ^{[1
]}

Mason, NJ ^{[1
]}

Walker, PJ ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

III-V; GaAs; InSb; GaSb; InAs; MOVPE; optical monitoring; surface photoabsorption; oxide desorption; substrate cleaning;

D O I：

10.1016/S0022-0248(98)00683-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the use of surface photoabsorption (SPA) as an in situ technique for monitoring III-V semiconductors in an MOVPE reactor. The technique gives information about the oxide desorption of various III-V substrates before growth. We find that the oxides from acid-etched GaAs desorb slowly even at high temperature (> 650 degrees C) unless atomic hydrogen is present. Alkali-etched GaAs oxides are desorbed at a much lower temperature (<440 degrees C). The shape and temperature range (260-410 degrees C) of the optical response associated with InAs and GaAs deoxidation is quite different to that from InSb and GaSb(260-530 degrees C). (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：163 / 167

页数：5

共 20 条

[1]

ALLWOOD DA, IN PRESS MAT SCI E B

[2]

ARMSTRONG SR, 1994, SURF SCI, V309, P1051

[3] Atomic hydrogen cleaning of GaSb(001) surfaces [J].

Bell, GR ;

McConville, CF .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2695-2697

[4] Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor [J].

Booker, GR ;

Daly, M ;

Klipstein, PC ;

Lakrimi, M ;

Kuech, TF ;

Li, J ;

Lyapin, SG ;

Mason, NJ ;

Murgatroyd, IJ ;

Portal, JC ;

Nicholas, RJ ;

Symons, DM ;

Vicente, P ;

Walker, PJ .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :777-782

[5] Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice [J].

Daly, MS ;

Dalton, KSH ;

Lakrimi, M ;

Mason, NJ ;

Nicholas, RJ ;

vanderBurgt, M ;

Walker, PJ ;

Maude, DK ;

Portal, JC .

PHYSICAL REVIEW B, 1996, 53 (16) :10524-10527

[6]

Daniltsev VM, 1995, IND LAB+, V61, P590

[7] Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions [J].

Dietz, N ;

Rossow, U ;

Aspnes, DE ;

Bachmann, KJ .

JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) :34-39

[8] REAL-TIME OPTICAL MONITORING OF EPITAXIAL-GROWTH - PULSED CHEMICAL BEAM EPITAXY OF GAP AND INP HOMOEPITAXY AND HETEROEPITAXY ON SI [J].

DIETZ, N ;

ROSSOW, U ;

ASPNES, D ;

BACHMANN, KJ .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) :1571-1576

[9] X-RAY PHOTOELECTRON SPECTROSCOPIC ANALYSIS OF THE OXIDE OF GAAS [J].

ISHIKAWA, T ;

IKOMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12A) :3981-3987

[10]

JOHNSON HD, 1995, I PHYS C SER, V144, P204

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