CrossNets -: High-performance neuromorphic architectures for CMOL circuits

被引:70
作者
Likharev, K [1 ]
Mayr, A [1 ]
Muckra, I [1 ]
Türel, Ö [1 ]
机构
[1] SUNY Stony Brook, Stony Brook, NY 11794 USA
来源
MOLECULAR ELECTRONICS III | 2003年 / 1006卷
关键词
neuromorphic networks; VLSI circuits; nanowires; molecular self-assembly;
D O I
10.1196/annals.1292.010
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The exponential, Moore's Law, progress of electronics maybe continued beyond the 10-nm frontier if the currently dominant CMOS technology is replaced by hybrid CMOL circuits combining a silicon MOSFET stack and a few layers of parallel nanowires connected by self-assembled molecular electronic devices. Such hybrids promise unparalleled performance for advanced information processing, but require special architectures to compensate for specific features of the molecular devices, including low voltage gain and possible high fraction of faulty components. Neuromorphic networks with their defect tolerance seem the most natural way to address these problems. Such circuits may be trained to perform advanced information processing including (at least) effective pattern recognition and classification. We are developing a family of distributed crossbar network (CrossNet) architectures that permit the combination of high connectivity neuromorphic circuits with high component density. Preliminary estimates show that this approach may eventually allow us to place a cortex-scale circuit with about 10(10) neurons and about 10(14) synapses on an approximately 10 X 10 cm(2) silicon wafer. Such systems may provide an average cell-to-cell latency of about 20 nsec and, thus, perform information processing and system training (possibly including self-evolution after initial training) at a speed that is approximately six orders of magnitude higher than in its biological prototype and at acceptable power dissipation.
引用
收藏
页码:146 / 163
页数:18
相关论文
共 71 条
[1]   Boltzmann machine neuron circuit using single-electron tunneling [J].
Akazawa, M ;
Amemiya, Y .
APPLIED PHYSICS LETTERS, 1997, 70 (05) :670-672
[2]   Evolution of strategies for self-assembly and hookup of molecule-based devices [J].
Allara, DL ;
Dunbar, TD ;
Weiss, PS ;
Bumm, LA ;
Cygan, MT ;
Tour, JM ;
Reinerth, WA ;
Yao, Y ;
Kozaki, M ;
Jones, L .
MOLECULAR ELECTRONICS: SCIENCE AND TECHNOLOGY, 1998, 852 :349-370
[3]  
[Anonymous], 2001, INT TECHNOLOGY ROADM
[4]  
Averin D., 1991, Modern Problems in Condensed Matter Sciences, V30, P173
[5]   THEORY OF SINGLE-ELECTRON CHARGING OF QUANTUM-WELLS AND DOTS [J].
AVERIN, DV ;
KOROTKOV, AN ;
LIKHAREV, KK .
PHYSICAL REVIEW B, 1991, 44 (12) :6199-6211
[6]   CORRELATED SINGLE-ELECTRON TUNNELING VIA MESOSCOPIC METAL PARTICLES - EFFECTS OF THE ENERGY QUANTIZATION [J].
AVERIN, DV ;
KOROTKOV, AN .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1990, 80 (3-4) :173-185
[7]  
Back T., 1996, EVOLUTIONARY ALGORIT
[8]  
Borsenberger PM, 1998, PHYS STATUS SOLIDI A, V166, P835, DOI 10.1002/(SICI)1521-396X(199804)166:2<835::AID-PSSA835>3.0.CO
[9]  
2-9
[10]  
Braitenberg V., 1998, CORTEX STAT GEOMETRY, DOI [DOI 10.1007/978-3-662-03733-1_27, 10.1007/978-3-662-03733-1]