Adsorption of pentacene on a silicon surface

被引:40
作者
Choudhary, D [1 ]
Clancy, P
Bowler, DR
机构
[1] Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA
[2] UCL, Dept Phys & Astron, London WC1E 6BT, England
基金
美国国家科学基金会;
关键词
ab initio quantum chemical methods and calculations; chemisorption;
D O I
10.1016/j.susc.2004.11.043
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A computational description of the chemical bonding interactions of a pentacene molecule on a Si(100)-(2 x 1) surface is carried out using a combination of tight-binding and Gaussian 98 ab initio approaches. These computations identify the molecular configurations responsible for the adsorption sites parallel and perpendicular to the dimer row observed in STM studies to be a nearly flat, relatively strain-free "tetra dimer". The calculations confirm experimental evidence for strong monolayer adsorption dictated by the nature of the underlying reconstructed dimer row: The binding energies of the most stable perpendicular and parallel adsorption sites are 5.02 and 4.42 eV, respectively. The results are consistent with STM studies of sub-monolayer coverage of pentacene on silicon showing that the number of perpendicular adsorbed structures slightly exceeds those for parallel-adsorbed structures. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:20 / 26
页数:7
相关论文
共 25 条
[1]   Structure of Bi nanolines: using tight binding to search parameter space [J].
Bowler, DR ;
Owen, JHG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (26) :6761-6769
[2]   Hydrogen diffusion on Si(001) studied with the local density approximation and tight binding [J].
Bowler, DR ;
Fearn, M ;
Goringe, CM ;
Horsfield, AP ;
Pettifor, DG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (17) :3719-3730
[3]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837
[4]  
CRAIG BI, 1993, SURF SCI, V280, pL279, DOI 10.1016/0039-6028(93)90675-A
[5]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[6]  
2-9
[7]  
FRISCH MJ, 2001, GAUSSIAN 98 REVISION
[8]   Tight-binding molecular-dynamics study of amorphous carbon deposits over silicon surfaces [J].
Fu, CC ;
Weissmann, M .
PHYSICAL REVIEW B, 1999, 60 (04) :2762-2770
[9]   Electronic structure of benzene adsorbed on single-domain Si(001)-(2x1):: A combined experimental and theoretical study [J].
Gokhale, S ;
Trischberger, P ;
Menzel, D ;
Widdra, W ;
Dröge, H ;
Steinrück, HP ;
Birkenheuer, U ;
Gutdeutsch, U ;
Rösch, N .
JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (13) :5554-5564
[10]   Tight-binding modelling of materials [J].
Goringe, CM ;
Bowler, DR ;
Hernandez, E .
REPORTS ON PROGRESS IN PHYSICS, 1997, 60 (12) :1447-1512