Preparation of PZT thick films by 0-3 composite method

被引：3

作者：

He, XY ^{[1
]}

Ding, AL ^{[1
]}

Qiu, PS ^{[1
]}

Luo, WG ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Lab Funct Inorgan Mat, Shanghai 200050, Peoples R China

来源：

FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷

关键词：

PZT; thick film; 0-3 composite method;

D O I：

10.1117/12.408334

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

PbZr0.40Ti0.60O3 (PZT) thick films are prepared on Pt/Ti/SiO2/Si substrate by a sol gel based 0-3 composite method. The influence of processing variable including powder characteristics, solvents feature and annealing condition is investigated. Microstructure and electric property of PZT thick films are examined and analyzed. Optimum parameters of process are suggested. PZT thick film of 10 mum thickness with excellent ferroelectric and dielectric properties has been obtained (Pr 24 muC/cm(2), epsilon (r) 680 at 1kHz).

引用

页码：609 / 612

页数：4