GaN-Based RF power devices and amplifiers

被引：1438

作者：

Mishra, Umesh K. ^{[1
]}

Shen, Likun ^{[1
]}

Kazior, Thomas E. ^{[2
]}

Wu, Yi-Feng ^{[3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Raytheon RF Componenets, Andover, MA 01810 USA

[3] Santa Barbara Technol Ctr, CRR Inc, Goleta, CA 93117 USA

来源：

PROCEEDINGS OF THE IEEE | 2008年 / 96卷 / 02期

基金：

美国国家科学基金会;

关键词：

gallium nitride; high electron mobility Transistors (HEMTS); microwave transistors; millimeter wave transistors; MMICs; reliability;

D O I：

10.1109/JPROC.2007.911060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high Output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.

引用

页码：287 / 305

页数：19

共 80 条

[1] Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm [J].

Adivarahan, V ;

Yang, J ;

Koudymov, A ;

Simin, G ;

Khan, MA .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) :535-537

[2] Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors [J].

Adivarahan, V ;

Gaevski, M ;

Sun, WH ;

Fatima, H ;

Koudymov, A ;

Saygi, S ;

Simin, G ;

Yang, J ;

Khan, MA ;

Tarakji, A ;

Shur, MS ;

Gaska, R .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) :541-543

[3] 10-W/mm AlGaN-GaNHFET with a field modulating plate [J].

Ando, Y ;

Okamoto, Y ;

Miyamoto, H ;

Nakayama, T ;

Inoue, T ;

Kuzuhara, M .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :289-291

[4]

[Anonymous], REL COMP SEM WORKSH

[5]

[Anonymous], 2004, Proceedings. IEEE Lester Eastman Conference on

[6] Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].

Binari, SC ;

Ikossi, K ;

Roussos, JA ;

Kruppa, W ;

Park, D ;

Dietrich, HB ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471

[7] Trapping effects in GaN and SiC microwave FETs [J].

Binari, SC ;

Klein, PB ;

Kazior, TE .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1048-1058

[8]

BOUTROS K, 2003, P INT EL DEV M DEC

[9] THE INFLUENCE OF THE STRAIN-INDUCED ELECTRIC-FIELD ON THE CHARGE-DISTRIBUTION IN GAN-ALN-GAN STRUCTURE [J].

BYKHOVSKI, A ;

GELMONT, B ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6734-6739

[10] Power and linearity characteristics of GaN MISFETs on sapphire substrate [J].

Chini, A ;

Wittich, J ;

Heikman, S ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) :55-57

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