Effects of self-heating on planar heterostructure barrier varactor diodes

被引：51

作者：

Stake, J ^{[1
]}

Dillner, L

Jones, SH

Mann, C

Thornton, J

Jones, JR

Bishop, WL

Kollberg, E

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Univ Virginia, Charlottesville, VA 22903 USA

[3] Rutherford Appleton Lab, Chilton, Oxon, England

[4] Anadig Inc, Warren, NJ 07059 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 11期

关键词：

heterostructure barrier varactor; self-heating; varactor frequency tripler;

D O I：

10.1109/16.726644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conversion efficiency for planar Al0.7GaAs/ GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al0.7GaAs/GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW, Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10-mu m diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GHz.

引用

页码：2298 / 2303

页数：6

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