Hydrogen diffusion in boron doped diamond: Evidence of hydrogen-boron interactions

被引：6

作者：

Chevallier, J ^{[1
]}

Theys, B ^{[1
]}

Grattepain, C ^{[1
]}

Deneuville, A ^{[1
]}

Gheeraert, E ^{[1
]}

机构：

[1] CNRS, Phys Solides Bellevue Lab, F-92195 Meudon, France

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II | 1998年 / 510卷

关键词：

D O I：

10.1557/PROC-510-169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deuterium diffusion has been investigated in boron doped diamond as a function of the diffusion temperature and the boron concentration. The results show that, up to 480 degrees C, hydrogen diffusion is limited by the boron concentration with a diffusion activation energy of 0.35 eV for [B] = 5x10(19) cm(-3). This first experimental evidence of deuterium-boron interactions in diamond is interpreted as the result of hydrogen ionization and diffusion of fairly mobile protons which farm pairs with negatively charged boron accepters.

引用

页码：169 / 174

页数：6