Single carbon nanotube transistor at GHz frequency

被引：61

作者：

Chaste, J. ^{[1
,2
]}

Lechner, L. ^{[3
]}

Morfin, P. ^{[1
,2
]}

Feve, G. ^{[1
,2
]}

Kontos, T. ^{[1
,2
]}

Berroir, J. -M. ^{[1
,2
]}

Glattli, D. C. ^{[1
,2
,4
]}

Happy, H. ^{[5
]}

Hakonen, P. ^{[3
]}

Placais, B. ^{[1
,2
]}

机构：

[1] Ecole Normale Super, Lab Pierre Aigrain, F-75005 Paris, France

[2] Univ Paris 06, Lab Assoc Aux, Paris, France

[3] Aalto Univ, Low Temp Lab, FIN-02015 Espoo, Finland

[4] CEA Saclay, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France

[5] CNRS, Inst Elect Microelect Nanotechnol, UMR8520, F-59652 Villeneuve Dascq, France

来源：

NANO LETTERS | 2008年 / 8卷 / 02期

关键词：

D O I：

10.1021/nl0727361

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance g(m) and gate-nanotube capacitance C-g of micro- and nanometric devices. A large and frequency-independent g(m) similar to 20 16 is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 66 aF/mu m is typical of top gates on a conventional oxide with epsilon similar to 10. This value is a factor of 3-5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies f(T) = g(m)/2 pi C-g. For our smallest devices, we find a large f(T) similar to.50 GHz with no evidence of saturation in length dependence,

引用

页码：525 / 528

页数：4

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