CMOS active pixel image sensor with CCD performance

被引：45

作者：

Meynants, G ^{[1
]}

Dierickx, B ^{[1
]}

Scheffer, D ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ADVANCED FOCAL PLANE ARRAYS AND ELECTRONIC CAMERAS II | 1998年 / 3410卷

关键词：

active pixel sensor; CMOS image sensor; electronic camera;

D O I：

10.1117/12.323997

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A color CMOS image sensor has been developed which meets the performance of mainstream CCDs. The pixel combines a high fill factor (70%) with a low diode capacitance. This yields a high light sensitivity, expressed by the conversion gain of 9 mu V/electron and the quantum efficiency * fill factor product of 28%. The temporal noise is 63 electrons, and the dynamic range is 67 dB. An offset compensation circuit in the column amplifiers limits the peak-to-peak fixed pattern noise to 0.15% of the saturation voltage.

引用

页码：68 / 76

页数：9