Raman spectroscopy of germanium films deposited with cluster-beam technique

被引：16

作者：

Wakaki, M ^{[1
]}

Iwase, M ^{[1
]}

Show, Y ^{[1
]}

Koyama, K ^{[1
]}

Sato, S ^{[1
]}

Nozaki, S ^{[1
]}

Morisaki, H ^{[1
]}

机构：

[1] UNIV ELECTROCOMMUN, CHOFU, TOKYO 182, JAPAN

来源：

PHYSICA B-CONDENSED MATTER | 1996年 / 219-20卷

关键词：

D O I：

10.1016/0921-4526(95)00803-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structure and the vibrational properties of germanium films deposited by the cluster-beam technique were investigated mainly using Raman spectroscopy. Germanium films were deposited on Si substrates at room temperature (Ge-RT) and liquid N-2 temperature (Ge-LNT). Raman as well as other techniques (XRD, TEM, optical absorption and PL) were used to characterize these films. The nanostructures were observed in Ge-LNT by TEM micrograph, while flat continuous images were found in Ge-RT. Raman spectra of both Ge films showed a broad peak around 270 cm(-1) different from that of cubic Ge (300 cm(-1)). Ge-RT films showed a line at 300 cm(-1) by annealing the films above 700 degrees C, while Ge-LNT did not give such line up to the 800 degrees C annealing. The relation between these spectra and the observed nanostructure is discussed.

引用

页码：535 / 537

页数：3

共 6 条

[1]

ARAI T, 1984, J SPECTROSC SOC JAPA, V23, P665

[2] A NEW DENSE FORM OF SOLID GERMANIUM [J].