Spin coherence and dephasing in GaN

被引:175
作者
Beschoten, B [1 ]
Johnston-Halperin, E
Young, DK
Poggio, M
Grimaldi, JE
Keller, S
DenBaars, SP
Mishra, UK
Hu, EL
Awschalom, DD
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1103/PhysRevB.63.121202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Time-resolved Faraday rotation is used to measure electron spin coherence in n-type GaN epilayers. Despite densities of charged threading dislocations of similar to5 x 10(8) cm(-2), this coherence yields spin lifetimes of similar to 20 ns at T=5 K, and persists to room temperature. Spin dephasing is investigated in the vicinity of the metal-insulator transition. The dependence on both magnetic field and temperature is found to be qualitatively similar to previous studies in n-type GaAs, suggesting a common origin for spin relaxation in these systems.
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页数:4
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