Effects of defects and impurities on electronic properties in CoSb3

被引:16
作者
Akai, K [1 ]
Kurisu, H [1 ]
Shimura, T [1 ]
Matsuura, M [1 ]
机构
[1] Yamaguchi Univ, Fac Engn, Yamaguchi, Japan
来源
PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年
关键词
D O I
10.1109/ICT.1997.667147
中图分类号
O414.1 [热力学];
学科分类号
摘要
The band structure and the density of states of doped and non-doped CoSb3 were computed by using the super-cell. The computation has been done by the linear muffin-tin orbital method with non-overlapped-muffin-tin spheres. Based on the computational results, some doping effects were discussed.
引用
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页码:334 / 337
页数:4
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