Effects of defects and impurities on electronic properties in CoSb3

被引：16

作者：

Akai, K ^{[1
]}

Kurisu, H ^{[1
]}

Shimura, T ^{[1
]}

Matsuura, M ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Yamaguchi, Japan

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667147

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The band structure and the density of states of doped and non-doped CoSb3 were computed by using the super-cell. The computation has been done by the linear muffin-tin orbital method with non-overlapped-muffin-tin spheres. Based on the computational results, some doping effects were discussed.

引用

页码：334 / 337

页数：4