Effects of defects and impurities on electronic properties in CoSb3
被引:16
作者:
Akai, K
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机构:
Yamaguchi Univ, Fac Engn, Yamaguchi, JapanYamaguchi Univ, Fac Engn, Yamaguchi, Japan
Akai, K
[1
]
Kurisu, H
论文数: 0引用数: 0
h-index: 0
机构:
Yamaguchi Univ, Fac Engn, Yamaguchi, JapanYamaguchi Univ, Fac Engn, Yamaguchi, Japan
Kurisu, H
[1
]
Shimura, T
论文数: 0引用数: 0
h-index: 0
机构:
Yamaguchi Univ, Fac Engn, Yamaguchi, JapanYamaguchi Univ, Fac Engn, Yamaguchi, Japan
Shimura, T
[1
]
论文数: 引用数:
h-index:
机构:
Matsuura, M
[1
]
机构:
[1] Yamaguchi Univ, Fac Engn, Yamaguchi, Japan
来源:
PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS
|
1997年
关键词:
D O I:
10.1109/ICT.1997.667147
中图分类号:
O414.1 [热力学];
学科分类号:
摘要:
The band structure and the density of states of doped and non-doped CoSb3 were computed by using the super-cell. The computation has been done by the linear muffin-tin orbital method with non-overlapped-muffin-tin spheres. Based on the computational results, some doping effects were discussed.