Patterned garnet films on substrates with ion-beam bombarded micropatterns

被引：2

作者：

Okamura, Y ^{[1
]}

Yamamoto, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Div Adv Elect & Opt Sci, Toyonaka, Osaka 5608531, Japan

来源：

HIGH-DENSITY MAGNETIC RECORDING AND INTEGRATED MAGNETO-OPTICS: MATERIALS AND DEVICES | 1998年 / 517卷

关键词：

D O I：

10.1557/PROC-517-487

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the selected-area epitaxy of rare-earth iron garnet crystalline and amorphous straight ridge patterns, from 4 mu m to 8 mu m in width, deposited on Gd3Ga5O12 single crystal substrates. These samples were fabricated via a sputter epitaxial method on substrates that were partially etched by ion-beam bombardment. The strip pattern direction has given the considerable influence on the crystal-graphic formation of the sidewall of the grown ridge. The ridge shapes were similar to results that have been reported for the dissolution forms of garnet crystals in phosphoric acid and the facet of garnet crystals grown from flux. Furthermore, we have successfully grown both an epitaxial garnet film onto an amorphous film and an amorphous straight ridge with a triangular shape surrounded by crystal.

引用

页码：487 / 492

页数：6