Distribution of 1.68 eV emission from diamond films

被引：8

作者：

Correia, MR ^{[1
]}

Monteiro, I ^{[1
]}

Pereira, E ^{[1
]}

Costa, LC ^{[1
]}

机构：

[1] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.368284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Free-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in terms of two emitting centers close in energy. Absolute intensity of the diamond peak is not correlated with the good quality of the film as assessed by the Raman linewidth and ratio of this line to the nondiamond Raman lines. (C) 1998 American Institute of Physics. [S0021-8979(98)08816-1].

引用

页码：2207 / 2211

页数：5

共 21 条

[1] RAMAN AND PHOTOLUMINESCENCE ANALYSIS OF STRESS STATE AND IMPURITY DISTRIBUTION IN DIAMOND THIN-FILMS [J].