Anti-Stokes Raman conversion in silicon waveguides

被引：121

作者：

Claps, R ^{[1
]}

Raghunathan, V ^{[1
]}

Dimitropoulos, D ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA

来源：

OPTICS EXPRESS | 2003年 / 11卷 / 22期

关键词：

D O I：

10.1364/OE.11.002862

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The first observation of parametric down-conversion in silicon is reported. Conversion from 1542.3 nm to 1328.8 nm is achieved using a CW pump laser at 1427 nm. The conversion occurs via Coherent Anti-Stokes Raman Scattering ( CARS) in which two pump photons and one Stokes photon couple through a zone-center optical phonon to an anti-Stokes photon. The maximum measured Stokes/anti-Stokes power conversion efficiency is 1 x 10(-5). The value depends on the effective pump power, the Stimulated Raman Scattering (SRS) coefficient of bulk silicon, and waveguide dispersion. It is shown that the power conversion efficiency is a strong function of phase mismatch inside the waveguide. (C) 2003 Optical Society of America.

引用

页码：2862 / 2872

页数：11

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