Contacts to a solar cell with extremely thin CdTe absorber

被引：58

作者：

Ernst, K ^{[1
]}

Engelhardt, R ^{[1
]}

Ellmer, K ^{[1
]}

Kelch, C ^{[1
]}

Muffler, HJ ^{[1
]}

Lux-Steiner, MC ^{[1
]}

Könenkamp, R ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2001年 / 387卷 / 1-2期

关键词：

CdTe; electrodeposition; porous TiO2; eta-solar cell;

D O I：

10.1016/S0040-6090(00)01731-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The concept for a solar cell with extremely thin absorber (eta-cell) comprises a porous TiO2 substrate covered by a CdTe film with a local thickness of 150-250 nm. At the present stage of development this type of cell exhibits a photovoltage between 600 and 700 mV and a photocurrent of 5-9 mA/cm(2) under AM1.5 illumination, indicating the feasibility of the concept. The fill factor is, however. only in the range of 20%, due to a strong voltage-dependence of the photocurrent. This paper discusses the influence of the front and back contacts on the limited cell performance and shows that the insertion of a buffer layer at the front contact gives an improved fill-factor. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：26 / 28

页数：3

共 7 条

[1] Characterization of II-VI compounds on porous substrates
Ernst, K
Sieber, I
Neumann-Spallart, M
Lux-Steiner, MC
Könenkamp, R
[J]. THIN SOLID FILMS, 2000, 361 : 213 - 217
[2] ERNST K, 2000, C P 17 EPS GLASG
[3] HIGH-EFFICIENCY ELECTRODEPOSITED CADMIUM TELLURIDE SOLAR-CELLS
FULOP, G
DOTY, M
MEYERS, P
BETZ, J
LIU, CH
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 327 - 328
[4] Photoelectrochemical study of thin film semiconductor heterostructures: Junction formation processes in CdS vertical bar CdTe solar cells
Kampmann, A
Lincot, D
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1996, 418 (1-2) : 73 - 81
[5] A novel deposition technique for compound semiconductors on highly porous substrates:: ILGAR
Möller, J
Fischer, CH
Muffler, HJ
Könenkamp, R
Kaiser, I
Kelch, C
Lux-Steiner, MC
[J]. THIN SOLID FILMS, 2000, 361 : 113 - 117
[6] MURATERON N, 1993, P 11 IEEE PVSC IEEE, P876
[7] SIEBENTRITT S, 1997, C P 14 EPS BARC

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