Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice

被引：16

作者：

Hong, YG ^{[1
]}

Tu, CW

Ahrenkiel, RK

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

molecular beam epitaxy; superlattices; nitrides;

D O I：

10.1016/S0022-0248(01)00762-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Short-period superlattices (SLs) of GaInAs/GaNAs were grown by gas-source molecular beam epitaxy. Hall measurement shows electron mobility is improved by a factor of almost two. Improvement of electron mobility can be attributed to the smaller effective mass of the SL structure. The photoluminescence (PL) intensity is improved by rapid thermal annealing (RTA). The PL intensity of digital alloys is 2.5-3 times higher than that of the random alloy at room temperature, and the improvement is even greater at low temperature (10 K) by a factor of about 12, The optimized RTA condition for short-period SLs is 700<^>C and 10s in Nz ambient. Photoconductive decay measurements show longer carrier lift time for the: SL samples, 0.2 mus vs. 0.1 mus for the random alloy, which could be caused by charge separation due to the type-II band lineup of the GaIn0.08As/GaN0.03As SLs. (C) 2001 Elsevier Science B,V. All rights reserved.

引用

页码：536 / 540

页数：5

共 14 条

[1] SUPERLATTICE MINIBANDS EXPLICIT FORMULAS FOR BAND-GAPS AND EFFECTIVE MASSES [J].

EINEVOLL, GT ;

HEMMER, PC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (07) :590-594

[2] Direct determination of electron effective mass in GaNAs/GaAs quantum wells [J].

Hai, PN ;

Chen, WM ;

Buyanova, IA ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1843-1845

[3] ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J].

HARRISON, JW ;

HAUSER, JR .

PHYSICAL REVIEW B, 1976, 13 (12) :5347-5350

[4] Analysis of band offset in GaNAs/GaAs by X-ray photoelectron spectroscopy [J].

Kitatani, T ;

Kondow, M ;

Kikawa, T ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (9A) :5003-5006

[5] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[6] InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs [J].

Kurtz, SR ;

Allerman, AA ;

Jones, ED ;

Gee, JM ;

Banas, JJ ;

Hammons, BE .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :729-731

[7] Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen [J].

Kurtz, SR ;

Allerman, AA ;

Seager, CH ;

Sieg, RM ;

Jones, ED .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :400-402

[8] Photo-Hall studies of modulation-doped field-effect transistors with short-period superlattice channels rather than alloy channels [J].

Moreira, MVB ;

deOliveira, AG ;

Py, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (05) :3350-3356

[9] BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON [J].

SAKAI, S ;

UETA, Y ;

TERAUCHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10) :4413-4417

[10] Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x [J].

Skierbiszewski, C ;

Perlin, P ;

Wisniewski, P ;

Knap, W ;

Suski, T ;

Walukiewicz, W ;

Shan, W ;

Yu, KM ;

Ager, JW ;

Haller, EE ;

Geisz, JF ;

Olson, JM .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2409-2411

← 1 2 →