Electrical conductivity and lattice defects in nanocrystalline cerium oxide thin films

被引:192
作者
Suzuki, T [1 ]
Kosacki, I
Anderson, HU
Colomban, P
机构
[1] Univ Missouri, Elect Mat Appl Res Ctr, Rolla, MO 65401 USA
[2] UMR 7075 CNRS, LADIR, F-94230 Thiais, France
[3] Univ Paris 06, F-94230 Thiais, France
关键词
D O I
10.1111/j.1151-2916.2001.tb00950.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The results of the electrical conductivity and Raman scattering measurements of CeO2 thin films obtained by a polymeric precursor spin-coating technique are presented. The electrical conductivity has been studied as a function of temperature and oxygen activity and correlated with the grain size. When compared with microcrystalline samples, nanocrystalline materials show enhanced electronic conductivity. The transition from extrinsic to intrinsic type of conductivity has been observed as the grain size decreases to < 100 nm, which appears to be related to a decrease in the enthalpy of oxygen vacancy formation in CeO2. Raman spectroscopy has been used to analyze the crystalline quality as a function of grain size. A direct comparison has been made between the defect concentration calculated from coherence length and nonstoichiometry determined from electrical measurements.
引用
收藏
页码:2007 / 2014
页数:8
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