Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles

被引：49

作者：

Okabayashi, Norio ^{[1
,2
]}

Maeda, Kosuke ^{[1
,2
]}

Muraki, Taro ^{[1
,2
]}

Tanaka, Daisuke ^{[3
,4
]}

Sakamoto, Masanori ^{[3
,4
]}

Teranishi, Toshiharu ^{[4
,5
]}

Majima, Yutaka ^{[1
,2
]}

机构：

[1] Tokyo Inst Technl, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[2] Japan Sci & Technol Agcy, CREST, Yokohama, Kanagawa 2268503, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[4] Japan Sci & Technol Agcy, CREST, Kyoto 6110011, Japan

[5] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期

关键词：

ROOM-TEMPERATURE; JUNCTIONS;

D O I：

10.1063/1.3676191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-electron transistors have the potential to become next-generation nanodevices and sensors owing to their small size, low power consumption, and high charge sensitivity, where the charging energy of the devices is the most important parameter determining the operational temperature. Here, we have demonstrated that the charging energy of single-electron transistors can be controlled (4864meV) by adopting electroless gold plating to make separation-defined nanogap electrodes and employing size-controlled chemically synthesized Au nanoparticles (5.2 +/- 0.5 nm) as a Coulomb island. At this charging energy, the devices can be operated up to 160 K with on/off current ratio of 60%. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676191]

引用

页数：3

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