Ohmic hole injection in poly(9,9-dioctylfluorene) polymer light-emitting diodes

被引:114
作者
Poplavskyy, D [1 ]
Nelson, J [1 ]
Bradley, DDC [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Expt Solid State Grp, Dept Phys, London SW7 2BW, England
关键词
D O I
10.1063/1.1596722
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here we report the observation of ohmic hole injection from a conducting polymer anode into poly(9,9-dioctylfluorene) in a polymer light-emitting diode structure. Although initially nonohmic, the contact can be made locally ohmic by electrically conditioning the device at voltages higher than the electroluminescence onset voltage. The ohmic nature of the contact in selected regions is confirmed by the appearance of dark injection space-charge-limited transient currents, which yield hole mobilities in good agreement with those measured by the time-of-flight method. The appearance of ohmic injection is discussed within a model that assumes the existence of electron traps near the anode interface. When the sample is conditioned electrons are injected from the cathode and are trapped near the anode inducing an interfacial dipole that reduces the barrier for hole injection. (C) 2003 American Institute of Physics.
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页码:707 / 709
页数:3
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