Crystallography of the NiHfSi phase in a NiAl (0.5Hf) single-crystal alloy

Small additions of Hf to conventionally processed NiAl single crystals result in the precipitation of a high density of cuboidal G-phase along with a newly identified silicide phase. Both of these phases form in the presence of Si which is not an intentional alloying addition but is a contaminant resulting from contact with the ceramic shell molds during directional solidification of the single-crystal ingots. The morphology, crystal structure and orientation relationship (O.R.) of the silicide phase in a NiAl(0.5 at.%Hf) single-crystal alloy have been determined using transmission electron microscopy, electron microdiffraction and energy dispersive X-ray spectroscopy. Qualitative elemental analysis and indexing of the electron microdiffraction patterns From the new phase indicate that it is an orthorhombic NiHfSi phase with unit cell parameters, a = 0.639 nm, b = 0.389 nm and c = 0.72 nm, and space group Pnma. The NiHfSi phase forms as thin rectangular plates on {111}(NiAl) planes with an O.R. that is given by (100)(NiHfSi) parallel to (111)(NiAl) and [010](NiHfSi) parallel to [(1) over bar 01](NiAl). Twelve variants of the NiHfSi phase were observed in the alloy and the number of variants and rectangular morphology of NiHfSi plates are consistent with symmetry requirements. Quenching experiments indicate that nucleation of the NiHfSi phase in NiAl(Hf) alloys is aided by the formation of [111](NiAl) vacancy loops that form on the {111}(NiAl) planes. Copyright (C) 1996 Metallurgica Inc.