Structural characterization of self-organized nanostructures

被引：6

作者：

Ruvimov, S ^{[1
]}

Liliental-Weber, Z

Washburn, J

Ledentsov, NN

Ustinov, VM

Shchukin, VA

Kop'ev, PS

Alferov, ZI

Bimberg, D

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 05期

关键词：

D O I：

10.1134/1.1130394

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Self-organized nano-objects fabricated in different semiconductor systems are currently at the focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high-resolution electron microscopy have been used to study the InAs quantum dots grown by molecular-beam epitaxy (MBE) on GaAs and InP substrates. Optimal imaging conditions for visualization of quantum dots were established. Size, shape, and stability of the equilibrium island arrays were analyzed with respect to the growth conditions. Both decrease and increase of the As pressure compared to the optimal value were shown to destroy the regular arrangement of the islands. Energy benefit due to the strain relaxation in the InAs islands is likely to be the driving force for their formation. (C) 1998 American Institute of Physics.

引用

页码：781 / 783

页数：3

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