Giant magnetoresistance in multilayers electrodeposited on n-Si

被引:50
作者
O'Keeffe, AP
Kasyutich, OI
Schwarzacher, W
de Oliveira, LS
Pasa, AA
机构
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] Univ Fed Santa Catarina, Dept Fis, BR-88040900 Florianopolis, SC, Brazil
关键词
D O I
10.1063/1.122066
中图分类号
O59 [应用物理学];
学科分类号
摘要
Co-Ni-Cu/Cu multilayers have been electrodeposited directly onto n-type Si substrates. This removes the need to use a seed-layer deposited by some other method as part of the growth process and makes electrodeposition a significantly more convenient method for fabricating films that exhibit giant magnetoresistance (GMR). A maximum GMR of over 10% and a sensitivity of over 0.04%/Oe were recorded. The GMR and sensitivity of the multilayers both increase with increasing Cu layer thickness. (C) 1998 American Institute of Physics.
引用
收藏
页码:1002 / 1004
页数:3
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