Direct electrodeposition of 1.46 eV bandgap Silver(I) oxide semiconductor films by electrogenerated acid

被引：107

作者：

Ida, Yuya ^{[2
]}

Watase, Seiji ^{[1
]}

Shinagawa, Tsutomu ^{[1
]}

Watanabe, Mitsuru ^{[1
]}

Chigane, Masaya ^{[1
]}

Inaba, Minoru ^{[2
]}

Tasaka, Akimasa ^{[2
]}

Izaki, Masanobu ^{[3
]}

机构：

[1] Osaka Municipal Tech Res Inst, Dept Elect Mat, Joto Ku, Osaka 5368553, Japan

[2] Doshisha Univ, Grad Sch Engn, Kyotanabe Shi, Kyoto 6100321, Japan

[3] Toyohashi Univ Technol, Toyohashi, Aichi 4418580, Japan

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 04期

关键词：

D O I：

10.1021/cm702865r

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A direct electrodeposition of 1.46 eV bandgap Silver(I) oxide semiconductor AgO2 films by oxides synthesis induced electrogenerated acid was reported. The thermodynamically stable region of dissolving silver(I) species is expanded to the alkaline region by forming ammonia silver complex ion. The application of constant current density of 10.0 mA cm-1 anodically to a F:SnO2-coated glass substrate results in the evolution of O 2gas accompanied by the formation of dark-gray deposit on the substrate. Surface and cross-sectional images of the AgO2 electrodeposited are seen to be continuous and well-faceted over the entire substrate. The anodic electrodeposition of AgO2 from the ammonical electrolyte are explained by the deposition mechanism of bulk of solution and vicinity of electrode.

引用

页码：1254 / 1256

页数：3

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