共 51 条
Electrochemically polymerized nanostructured poly(3.4-ethylenedioxythiophene)-poly(styrenesulfonate) buffer layer for a high performance polymer solar cell
被引:32
作者:

Yang, Hongbin
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Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

Song, Qunliang
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机构: Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

Lu, Zhisong
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机构: Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

Guo, Chuxian
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机构: Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

Gong, Cheng
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机构: Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

Hu, Weihua
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机构: Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore

Li, Chang Ming
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机构: Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore
机构:
[1] Nanyang Technol Univ, Ctr Adv Bionanosyst, Singapore 637457, Singapore
关键词:
CHARGE-TRANSPORT;
PHOTOVOLTAIC DEVICES;
HOLE MOBILITY;
MORPHOLOGY;
EFFICIENCY;
FILMS;
ELECTROCATALYSIS;
RECOMBINATION;
NANOCOMPOSITE;
D O I:
10.1039/c0ee00117a
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
An electrochemically polymerized uniform column-like poly(3.4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:Pss) nanostructure synthesized on indium tin oxide substrate has been used as the buffer layer to construct a polymer bulk heterojunction solar cell, demonstrating 50% higher power conversion efficiency (from 2.56 to 3.86%) than that of using the spin-coated PEDOT: Pss as the buffer layer. The enhanced device performance is ascribed to the improved carrier transport from the highly dense, uniform column-like PEDOT: Pss nanostructure, which penetrates into the polymer blend film to improve the connection of the active layer with the anode while providing a large conducting area for charge transport. This approach is compatible with the state-of-the-art bulk heterojunction solar cells, thus offering a high throughput, low cost manufacturing process for a high performance device.
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页码:1580 / 1586
页数:7
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