Material quality improvements for high voltage 4H-SiC diodes

被引：6

作者：

Kalinina, E

Kossov, V

Shchukarev, A

Bratus, V

Pensl, G

Rendakova, S

Dmitriev, V

Hallen, A

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Optron Inst, St Petersburg 194233, Russia

[3] Mekhanobr Analyt Ctr, St Petersburg 199026, Russia

[4] Inst Phys Appl, D-91058 Erlangen, Germany

[5] TDI Inc, Gaithersburg, MD 20877 USA

[6] KTH Electrum, Dept Elect, S-16440 Kista, Sweden

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期

关键词：

silicon carbide; epitaxy; ion implantation; p-n junction;

D O I：

10.1016/S0921-5107(00)00660-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of thin 4H-SiC buffer layers grown by liquid phase epitaxy (LPE) on structural quality of 4H-SiC low-doped epitaxial layers, grown by chemical vapor deposition (CVD) was investigated in detail. A dramatic defect density reduction in CVD epitaxial layers grown on commercial wafers with buffer LPE layer was detected. P(+)n junctions were formed on these CVD layers by high dose Al ion implantation followed by rapid thermal anneal. It was shown that both the increase of diffusion lengths of minority carriers (Lp) in CVD lavers and the forming of p(+)-layers after Al ion implantation and high temperature anneal lead to superior device characteristics. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：337 / 341

页数：5

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