Investigations of the interface stability in HfO2-metal electrodes

被引:23
作者
Fillot, F
Chenevier, B
Maîtrejean, S
Audier, M
Chaudouët, P
Bochu, B
Sénateur, JP
Pisch, A
Mourier, T
Monchoix, H
Guillaumot, B
Passemard, G
机构
[1] CEA, LETI, DTS, STME,LDCM, F-38054 Grenoble 9, France
[2] Ecole Natl Super Phys Grenoble, Mat & Genie Phys Lab, UMR 5628, F-38402 St Martin Dheres, France
[3] Inst Natl Polytech Grenoble, LTPCM, F-38402 St Martin Dheres, France
[4] Appl Mat Inc, F-38246 Meylan, France
[5] STMicroelect, F-38926 Crolles, France
关键词
thermal stability; interfaces; X-ray reflectometry; thermodynamic considerations; electrodes;
D O I
10.1016/S0167-9317(03)00428-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As the sharpness of the metal-oxide interface is of major importance to develop efficient structures, we have studied the thermal stability of interfaces in a series of thin film samples where the metallic component was either Pt, Al, Pd, Ni, Nb or Ti deposited on a thin HfO2 film. Thermodynamic considerations have been carried out to determine the possible products of metal-oxide reaction at a temperature of 500 degreesC. The evolution of the as-deposited thin film structures as a function of annealing temperature has been analysed by combining various techniques and specifically using X-ray reflectometry. This particular technique allows one to detect very thin embedded interfaces, distinguish small density variations and determine accurately the thickness, the normal roughness and the density of each layer. In addition, reflectometry results have been correlated with atomic force microscopy and transmission electron microscopy observations of selected samples. Our results indicate that platinum, palladium and nickel are stable up to 500degreesC on hafnium oxide. Annealed aluminium, an interfacial layer forms, whereas niobium and titanium present a diffuse interface. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码:384 / 391
页数:8
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